人工晶体学报2012，Vol.41Issue(2)：294-297,4.
SiC籽晶表面状态对晶体质量的影响
Effect of the Surface State of SiC Seed on the Crystal Quality
杨莺 1刘素娟 1陈治明 1林生晃 1李科 1杨明超1
作者信息
- 1. 西安理工大学电子工程系,西安710048
- 折叠
摘要
Abstract
In order to investigate the effect of the surface state of SiC seed on the crystal quality, the etched wafers with polished surface and unpolished surface were used as the seed crystals. The obtained SiC crystals was observed by optical microscope. The results revealed that the defect density and size in the crystal which used the etched and polished wafer as the seed crystal were smaller than that of crystal which used the unpolished wafer. Because the polishing processing would get rid of some shallow etching pits and reduce the size of deep etching pits, this processing could enhance to shrink defect density and size of seed. It means that etching and polishing processing will reduce the defect density of crystal at the lateral growth stage, and hence to improve crystal quality.关键词
SiC籽晶/表面状态/腐蚀/抛光/缺陷密度Key words
SiC seed/surface state/etching/polishing/defect density分类
数理科学引用本文复制引用
杨莺,刘素娟,陈治明,林生晃,李科,杨明超..SiC籽晶表面状态对晶体质量的影响[J].人工晶体学报,2012,41(2):294-297,4.
