人工晶体学报2012，Vol.41Issue(2)：338-341,347,5.
硫镓银晶体的化学腐蚀研究
Chemical Etching Research on AgGaS2 Crystals
于鹏飞 1朱世富 1赵北君 1陈宝军 1何知宇 1樊龙1
作者信息
摘要
Abstract
An integral, crack-free and large-sized AgGaS2 single crystal was obtained by the modified self-seeding Bridgman method. The technique of ascending the growth ampoule and holding the tip in specific height for a period of time at the beginning of growth was adopted and was proved to be effective for promoting geometric elimination. The grown crystal was characterized using the powder X-ray diffraction (XRD). Sharp and intense XRD spectra of (101) , (112) and (001) faces were obtained. Etchants of different mole ratios were used to etch various faces of AgGaS2 crystal. Quadrilateral etch pits appear on (101) faces, triangular etch pits appear on (112) faces, and morphology on (001) face of AgGaS2 crystal exhibits vertical etch lines. Etch pits on (101) and (112) faces observed by SEM exhibit differentiated quadrilateral and triangular shapes. The densities of etch pits were calculated to be at the order of 105/cm2 magnitude. The results show that the large-sized AgGaS2 single crystal obtained by modified method has a low defect density and is of good quality.关键词
AgGaS2晶体/垂直布里奇曼法/化学腐蚀/蚀坑形貌Key words
AgGaS2 crystal/vertical Bridgman method/chemical etching/etch pits morphology分类
数理科学引用本文复制引用
于鹏飞,朱世富,赵北君,陈宝军,何知宇,樊龙..硫镓银晶体的化学腐蚀研究[J].人工晶体学报,2012,41(2):338-341,347,5.
