窄带隙Ⅳ-Ⅵ族半导体PbTe(111)的表面氧化及氧的热脱附机理OA北大核心CSCDCSTPCD
Oxidation and Oxygen Thermal Desorption Mechanism on Narrow-Gap Ⅳ-Ⅵ Semiconductor PbTe(111) Surface
利用X射线光电子能谱(XPS)、扫描隧道显微镜(STM)以及低能电子衍射(LEED),对PbTe(111)薄膜的表面氧化及氧的热脱附机理进行了研究.结果表明:PbTe(111)薄膜经500 V Ar+轰击加上250℃高温退火循环处理,可得到呈(1×1)周期性排列的清洁表面.将此清洁表面暴露于大气两天后,表面被氧化形成了PbO2、PbO和TeO2,氧化层的厚度大于2个单原子层(ML),与清洁PbTe(111)表面相比,被氧化的PbTe(111)表面…查看全部>>
Oxidation and thermal desorption mechanism on the PbTe(111) surface were investigated using X-ray photoemission spectroscopy (XPS), scanning tunneling microscopy (STM), and low-energy-electron diffraction (LEED). The initial cleaning of the surface by 500 VAr+ sputtering followed by annealing at 250 ℃ yielded a perfect (1×1) PbTe(111) surface. XPS measurements showed that PbO2, PbO, and TeO2 were present at the PbTe(111) surface after air exposure for 2 days…查看全部>>
吴海飞;吴珂;张寒洁;廖清;何丕模
绍兴文理学院物理系,浙江绍兴312000浙江大学物理系,杭州310027浙江大学物理系,杭州310027浙江大学物理系,杭州310027浙江大学物理系,杭州310027
化学化工
表面氧化脱附PbTe(111)X射线光电子能谱扫描隧道显微镜
Surface oxidation Desorption PbTe(111) X-ray photoemission spectroscopy Scanning tunneling microscopy
《物理化学学报》 2012 (5)
有机半导体生长及其相关性质
1252-1256,5
国家自然科学基金(60506019,10674118,10774129)资助项目
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