物理学报2012，Vol.61Issue(14)：435-439,5.
氮化硅薄膜中硅纳米颗粒的形成机制研究
The formation mechanism of the silicon nano-clusters embedded in silicon nitride＊
摘要
Abstract
The silicon nitride films are prepared on c-Si substrates by plasma enhanced chemical deposition（PECVD） with silane as the silicon source in mixture gas（N_2/NH_3） as the nitrogen source.We prepare different kinds of films at different flow rates of the nitrogen with other conditions kept the same.X-ray diffraction（XRD） is employed to analyze the crystal structure,and the existence of the silicon nanoparticles embedded in the silicon nitride film is verified according to the caculation of the lattice size.Fourier transform infrared spectra are employed to probe the concentration evolutions of various chemical bonds with the flow rate of the nitrogen,with which by combining the chemical reaction process,the formation mechanism of the silicon nano-clusters embedded in silicon nitride is investigated.The results show the initial positions of silicon nanoparticles are conducible to the formation of silicon nanoparticles when the chemical reaction proceeds towards the direction in which the Si—Si bonds form.In addition,XRD analysis and photoluminescence characteristics show that the size and the concentration of the embedded nanoparticles increase with the flow rate of the nitrogen increasing.关键词
等离子体增强化学气相沉积技术/氮化硅薄膜/纳米硅颗粒/键合作用Key words
PECVD/silicon nanoparticles/silicon nitride/chemical bonds分类
数理科学引用本文复制引用
邹祥云,苑进社,蒋一祥..氮化硅薄膜中硅纳米颗粒的形成机制研究[J].物理学报,2012,61(14):435-439,5.基金项目
重庆高校创新团队基金（批准号：201013）资助的课题~~ （）
