物理学报2012，Vol.61Issue(15)：494-499,6.
热处理对富硅氧化硅薄膜中硅纳米晶形成的影响
Effects of thermal treatments on the formation of nanocrystalline Si embedded in Si-rich oxide films
摘要
Abstract
Silicon oxide films containing nanocrystalline Si（nc-Si） are fabricated by magnetron sputtering method followed by one-stepannealing, two-step-annealing and rapid thermal annealing（RTA）,separately.In silicon-rich oxide films containing～42.63 at.%of Si,dense nc-Si in a magnitude of 1012/cm-2 are obtained in all of the samples subjected to three different thermal treatments.In the two-step-annealing sample,the density of nc-Si reachs a maximum（2.2×1012/cm-2）,and the nc-Si is well crystallized and uniform in size distribution.In the one-step-annealing sample,the density of nc-Si is silightly lower than in the two-step-annealing sample, and large deficiently crystallized nc-Si is observed in the sample.The RTA leads to the lowest density of nc-Si with the largest size distribution among the three samples.Moreover,large nc-Si formed by coalescence of small ones and twin crystals are also discovered in the RTA sample.It is believed that nucleation at the early stage of nanocrystal growth influences the density and the micostructure of nc-Si.The annealing at low temperature in the two-step-annealing facilitates the formation of new nulcei,which is beneficial to improving the quality and density of nc-Si.关键词
硅纳米晶/氧化硅薄膜/热处理Key words
nanocrystalline Si/silicon rich oxide films/thermal treatment分类
信息技术与安全科学引用本文复制引用
蔡雅楠,崔灿,沈洪磊,梁大宇,李培刚,唐为华..热处理对富硅氧化硅薄膜中硅纳米晶形成的影响[J].物理学报,2012,61(15):494-499,6.基金项目
国家自然科学基金 （）
浙江省自然科学基金 （）
浙江省大学生科技创新项目（批准号：2009R406063）资助的课题 （）
