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退火温度对N+注入ZnO:Mn薄膜结构及室温铁磁性的影响

杨天勇 孔春阳 阮海波 秦国平 李万俊 梁薇薇 孟祥丹 赵永红 方亮 崔玉亭

物理学报2012,Vol.61Issue(16):459-465,7.
物理学报2012,Vol.61Issue(16):459-465,7.

退火温度对N+注入ZnO:Mn薄膜结构及室温铁磁性的影响

Effects of the annealing temperature on microstructure and room-temperature ferromagnetism of N+ ion-implanted ZnO:Mn thin film

杨天勇 1孔春阳 1阮海波 2秦国平 3李万俊 1梁薇薇 1孟祥丹 1赵永红 1方亮 2崔玉亭1

作者信息

  • 1. 重庆市光电功能材料重点实验室,重庆400047
  • 2. 重庆大学物理学院,重庆400030
  • 3. 重庆市光电功能材料重点实验室,重庆400047 重庆大学物理学院,重庆400030
  • 折叠

摘要

Abstract

The Mn-N codoped ZnO thin films are fabricated on quartz glass substrates using the radio-frequency magnetron sputtering technique together with the direct N+ ion-implantation. The effects of annealing temperature on microstructure and room-temperature ferromagnetism of the thin films are investigated. The results indicate that both divalent Mn2+ and trivalent N3- ions are incorporated into ZnO lattice. As the annealing temperature increases, the lattice distortion induced by N+ ion-implantation can decrease, and the N3- may escape from the film, which results in the reducing of acceptor (No) concentration. Ferromagnetism is observed in the (Mn,N)-codoped ZnO thin film at 300 K and found to be the sensitive to the acceptor concentration. The mechanism of roomtemperature ferromagnetism in the ZnO:(Mn, N) is discussed based on the bound magnetic polaron model.

关键词

ZnO:Mn薄膜/离子注入/晶体结构/室温铁磁性

Key words

ZnO:Mn thin films/ion-implantation/crystal structure/room-temperature ferromagnetism

分类

信息技术与安全科学

引用本文复制引用

杨天勇,孔春阳,阮海波,秦国平,李万俊,梁薇薇,孟祥丹,赵永红,方亮,崔玉亭..退火温度对N+注入ZnO:Mn薄膜结构及室温铁磁性的影响[J].物理学报,2012,61(16):459-465,7.

基金项目

重庆市自然科学基金(批准号:CSTC.2011BA4031)资助的课题. ()

物理学报

OA北大核心CSCDCSTPCDSCI

1000-3290

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