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退火温度对同质缓冲层ZnO薄膜微观结构和光学特性的影响

马书懿 赵强 靳钰珉 马李刚 张小雷 刘静 杨付超 李发明

西北师范大学学报(自然科学版)2012,Vol.48Issue(4):27-32,6.
西北师范大学学报(自然科学版)2012,Vol.48Issue(4):27-32,6.

退火温度对同质缓冲层ZnO薄膜微观结构和光学特性的影响

Effects of annealing temperature on structural and optical properties of homo-buffer layer ZnO thin films

马书懿 1赵强 1靳钰珉 1马李刚 1张小雷 1刘静 1杨付超 1李发明1

作者信息

  • 1. 西北师范大学物理与电子工程学院,甘肃省原子分子与功能材料重点实验室,甘肃兰州 730070
  • 折叠

摘要

Abstract

ZnO thin film was deposited on Si substrate with the insertion of ZnO buffer layer, which was annealed at 300℃ in vacuum. ZnO thin film was grown by RF magnetron sputtering deposition technique and the ZnO/ZnO-buffer/Si films have been further annealed with different annealing temperatures. The microstructure and luminescence properties of ZnO thin films were investigated by X-ray diffraction(XRD) and photoluminescence (PL) spectrum, respectively. The results reveal that the sample, which was grown on buffer layer of the deposition time is 6 min, has the best crystalline quality. The crystalline quality is markly improved with annealing temperature increasing. All films have an average optical transparency over 90% in the visible range. The optical band gaps gradually decrease from 3. 221 eV to 3. 184 eV within the increase of annealing temperature. Five main peaks located at about 384 nm(UV), 420 nm(violet), 455 nm(blue), 473 nm(blue) and 530 nm(green) photoluminescence are observed from the PL spectra. The UV emission is attributed to free exciton-related activity. The violet luminescence is associated with radiative defects. The blue emission is ascribed to oxygen vacancies and interstitial Zn. The green emission is due to electron transition from deep donor levels of oxygen vacancies to shallow acceptor levels of Zn vacancies. The 455 nm blue peak shifts from 455 nm to 447 nm as the annealing temperature increases from 400℃ to 600 ℃. The intensity of 530 nm green first increases then decreases as annealing temperature increases, which attributes to the reduce of Zn vacancies.

关键词

同质缓冲层/ZnO薄膜/光致发光/辐射跃迁

Key words

homo-buffer layers ZnO thin film/ photoluminescence/ radiation transition

分类

数理科学

引用本文复制引用

马书懿,赵强,靳钰珉,马李刚,张小雷,刘静,杨付超,李发明..退火温度对同质缓冲层ZnO薄膜微观结构和光学特性的影响[J].西北师范大学学报(自然科学版),2012,48(4):27-32,6.

基金项目

国家自然科学基金资助项目(10874140) (10874140)

甘肃省自然科学基金资助项目(0710RJZA105) (0710RJZA105)

西北师范大学大学生科技创新基金资助课题 ()

西北师范大学学报(自然科学版)

OA北大核心CSTPCD

1001-988X

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