原子与分子物理学报2012，Vol.29Issue(3)：532-538,7.DOI:10.3969/j.issn.1000-0364.2012.03.026
非晶Si1-x Gex:H薄膜太阳能电池研究
A study on solar cell of a-Si1-xGex : H thin films
摘要
Abstract
The AMPS-ID program is used to investigate the electrical and optical properties of a-SiC:H/ a-Sii-jGer :H/a-Si: H thin film solar cell. The short circuit current density, open circuit voltage, fill factor and efficiency of the solar cell are investigated. The efficiency of the solar cell is 9. 19% as the thickness of a-Si1-x Gex;: H is 340 nm with the Ge content x=0. 1. In addition, we also discuss the factors which affect the sola- cil efficiency.关键词
太阳能电池/薄膜/半导体Key words
solar cell/thin films/semiconductor分类
数理科学引用本文复制引用
费英,史力斌..非晶Si1-x Gex:H薄膜太阳能电池研究[J].原子与分子物理学报,2012,29(3):532-538,7.基金项目
教育部科学技术重点项目(211035) （211035）
辽宁省自然科学基金(201102004) （201102004）
