真空电子技术Issue(4)：24-27,4.
氮化铝陶瓷Ti-Ag-Cu活性法焊接界面的微观结构
The Interface Microstructure of Ti-Ag-Cu Soldered AlN Ceramics
裴静 1高陇桥1
作者信息
- 1. 北京真空电子技术研究所,北京100015
- 折叠
摘要
Abstract
The A1N ceramics were soldered with metalized A12O3 ceramics by Ti-Ag-Cu active filler metal process. The samples were soldered by Ag-Cu after being coated with TiH2 ,or directly by Ti-Ag-Cu alloy. The microstructures of the interfaces soldered by these two different methods were compared.关键词
AlN陶瓷/Ti-Ag-Cu活性法/微观结构Key words
A1N, Ti-Ag-Cu active filler metal process,microstructure分类
通用工业技术引用本文复制引用
裴静,高陇桥..氮化铝陶瓷Ti-Ag-Cu活性法焊接界面的微观结构[J].真空电子技术,2012,(4):24-27,4.
