电子器件2012，Vol.35Issue(4)：399-405,7.DOI:10.3969/j.issn.1005-9490.2012.04.008
一款基于0.13μm CMOS工艺,0.1 GHz～18 GHz采用双反馈和噪声消除技术的低噪声放大器设计
A Novel 0.1 GHz ～ 18 GHz LNA in 0.13 μm CMOS Exploiting Double-Feedback and Noise-Cancellation
摘要
Abstract
A novel 1.2 V,0.1 GHz ～ 18.0 GHz cascade LNA ( Low Noise Amplifier) is reported.Feedback network is utilized to facilitate broadband matching instead of introducing oscillation.An inverter is employed as the second stage for noise-cancellation.Low Q inductive peaking and series peaking are included to extend the operation bandwidth,and the applied inductors are with low area consumption.The LNA achieves a noise figure(NF) less than 4 dB with both I/O reflection coefficient better than -10 dB.The maximum forward gain reaches 15.34 dB while the minimum one is 14.54 dB,gain flatness is therefore captured.ⅡP3 of -4 dBm alone with the 1 dB desensitization point of -24dBm at 9 GHz are found,at the expense of 30 mW power dissipation.关键词
固态器件及电路/计算机辅助设计/超带宽低噪声放大器/级联结构/双反馈结构/噪声消除技术Key words
solid-state components and circuits/computer aided design/UWB (Ultra Wave Band) LNA (Low Noise Amplifier)/cascade/double feedback/noise cancellation分类
信息技术与安全科学引用本文复制引用
梁元,张弘..一款基于0.13μm CMOS工艺,0.1 GHz～18 GHz采用双反馈和噪声消除技术的低噪声放大器设计[J].电子器件,2012,35(4):399-405,7.基金项目
The foundation assistance of State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology （）
The Key Laboratory of Wide Band-gap Semiconductor Materials and Devices of Ministry of Education （）
The Fundamental Research Funds for.Central Universities (k50510250010) （k50510250010）
