华东理工大学学报：自然科学版2012，Vol.38Issue(5)：635-639,5.
IGBT数值模型建立及在三电平逆变电路的应用
IGBT Numerical Modeling and Application in Three-Level Inverter
摘要
Abstract
The numerical model of N-Channel IGBT is analysed and simulated by PSpice. This numerical model can reflect the characteristic of MOSFET and PNP bipolar transistor. Most of the existing simulation means are complex, and the temperature characteristic is ignored. In this paper, a novel modeling method of IGBT is proposed by considering measurement and data sheet values. According to the parameters of IGBT for the type of FGW50N60HD, its IGBT model is established, which is further tested by the experiment in three-level inverter. Moreover, the internal parameters of IGBT model are easily modified according to the change of the outside temperature surroundings. Finally, the simulation and experimental results demonstrate the validities of the model in different temperature conditions.关键词
IGBT/PSpice/数值模型/温度/三电平Key words
IGBT/PSpice/numerical model/temperature/three-level分类
信息技术与安全科学引用本文复制引用
魏磊,许国良,陈权,李国丽,汪江其..IGBT数值模型建立及在三电平逆变电路的应用[J].华东理工大学学报：自然科学版,2012,38(5):635-639,5.基金项目
安徽省优秀青年人才基金 （）
