红外与毫米波学报2012，Vol.31Issue(4)：302-305,335,5.DOI:10.3724/SP.J.1010.2012.00302
[110]晶向近本征硅单晶双光子吸收各向异性
Anisotropy of two-photon absorption in [ 110]-cut nearly-intrinsic silicon crystal
摘要
Abstract
The anisotropy of photocurrent induced by two-photon absorption in [ 110]-cut nearly-intrinsic crystal silicon sample is investigated. The anisotropy coefficient of third-order nonlinear susceptibility of Si at wavelength of 1. 3 μm is measured to be -0.25, and the ratio of Xxxxx to xxxyy is 2.4. The independent element Xxxxx is consequently obtained to be about 1.49 × 10-19 m2/V2 based on the previously observed result of Xxxyy.关键词
非线性光学/硅单晶/双光子吸收/三阶极化率/非线性各向异性Key words
nonlinear optics/ silicon crystal/ two-photon absorption/ third-order susceptibility/ nonlinear anisotropy分类
数理科学引用本文复制引用
刘秀环,李明利,陈占国,贾刚,时宝,朱景程,牟晋博,李一..[110]晶向近本征硅单晶双光子吸收各向异性[J].红外与毫米波学报,2012,31(4):302-305,335,5.基金项目
国家自然科学基金国际(地区)合作与交流(NSFC-RFBR)项目(61111120097) （地区）
国家自然科学基金(60976037,61077026) （60976037,61077026）
国家“863”计划(2009AA03Z419) （2009AA03Z419）
吉林省自然科学基金(201215019). （201215019）
