陕西师范大学学报：自然科学版2012，Vol.40Issue(5)：23-26,4.
多层Ge纳米晶镶嵌Si基薄膜制备与光学特性
Fabrication and optical properties of multilayered Ge nanocrystals embedded in Si substrate
摘要
Abstract
Multilayered Ge nanocrystals(Ge-ncs) with high density and better uniformity embedded in composite film(Ge-ncs+SiO2/GeO2) have been prepared by a(SiO2+Ge)/(SiO2+GeO2) superlattice method magnetron co-sputtering technique and subsequent annealing in N2 ambient.The optical properties of the prepared composite film was investigated by spectroscopic ellipsometry and the band expansion of the prepared Ge-ncs was discussed in terms of the sp3 tight binding model theory.The size of the prepared Ge-ncs is 9.8 nm.The refractive index n(λ) shows a normal dispersion and the extinction coefficient k(λ) indicates a bigger absorption characteristic around 1 340 nm.The optical band gap of the prepared Ge-ncs was determined to be 0.82 eV.As compared with bulk Ge,the multilayered Ge-ncs exhibits a certain blue shift in the absorption spectrum and a band gap expansion of 0.16 eV.The band gap expansion can be well explained by quantum confinement effect as well as the sp3 tight binding model.关键词
多层Ge纳米晶/磁控溅射/椭圆偏振光谱法/光学特性/量子限域效应Key words
multilayered Ge nanocrystals/magnetron sputtering/ellipsometry/optical properties/quantum confinement effect分类
教育学引用本文复制引用
刘晓静,高斐,赵卓斋,孙文超,张君善,宋美周,李宁..多层Ge纳米晶镶嵌Si基薄膜制备与光学特性[J].陕西师范大学学报：自然科学版,2012,40(5):23-26,4.基金项目
国家自然科学基金资助项目 （）
中央高校基本科研业务费专项资金项目 （）
