物理学报2012，Vol.61Issue(17)：470-475,6.
新型SOANN埋层SOI器件的自加热效应研究
Study on the self-heating effect in silicon-on-insulator devices with SOANN buried oxide
摘要
Abstract
In this paper, we present a new silicon-on-insulator （SO1） buried oxide structure, i.e., silicon on aluminum nitride with nothing （SOANN）. In the novel structure, the traditional SiO2 is replaced by A1N, and gas cavity is constructed in the SOI buried oxide. The self-heating effect of novel SOI device is analyzed. The result shows that using A1N as a buried oxide, the temperature of lattice and the effectively restrained self-heating effect can decrease. In addition, the gas cavity in the buried oxide can provide a heat emission passage and reduce the dielectric constant. The coupling effect of electric field lines from drain to source is weakened, and the drain induced barrier lowering effects is effectively restrained. Therefore, this new SOANN structure can improve the performance of the SOI devices, and provide high reliability as well.关键词
自加热效应/漏致势垒降低/A1N/空洞Key words
self-heating effects/DIBL/A1N/gas cavity分类
信息技术与安全科学引用本文复制引用
曹磊,刘红侠..新型SOANN埋层SOI器件的自加热效应研究[J].物理学报,2012,61(17):470-475,6.基金项目
国家自然科学基金（批准号：60976068,60936005）,教育部科技创新工程重大项目培育资金项目（批准号：708083）和教育部博士点基金（批准号：20080701001o）资助的课题 （）
