物理学报2012，Vol.61Issue(17)：476-481,6.
GaN MMIC中SiN介质MIM电容的可靠性
Reliability of SiN-based MIM capacitors in GaN MMIC
摘要
Abstract
Reliability assessment of SiN MIM capacitors in GaN MMIC is performed by constant voltage stress test. Two kinds of failure modes, critical charge density at which the dielectric breaks down and mean time prior to failure are investigated. The trap energy level in SiN dielectric is obtained by temperature dependent current characteristics. The degradation mechanism of SiN MIM capacitor is analyzed. The research shows that new donor-like traps are generated at dominant position during the stress. And the trap energy level becomes deeper after stress. The increased trap accelerates the scattering of the carrier, which leads to the decrease of leakage current in the end. The investigation on the failure mechanism of SiN MIM capacitor provides a reference for reinforcing the dielectric capacitors.关键词
SiN/MIM电容/缺陷/平均失效前时间Key words
SiN/MIM capacitor/trap/MTTF分类
信息技术与安全科学引用本文复制引用
王鑫华,王建辉,庞磊,陈晓娟,袁婷婷,罗卫军,刘新宇..GaN MMIC中SiN介质MIM电容的可靠性[J].物理学报,2012,61(17):476-481,6.基金项目
国家重点基础研究计划（973）项目（批准号：2010CB327500）资助的课题 （）
