物理学报2012，Vol.61Issue(18)：355-360,6.
采用AI／TaN叠层电极提高Si基GePIN光电探测器的性能
Improvement on performance of Si-based Ge PIN photodetector with AI/TaN electrode for n-type Ge contact
摘要
Abstract
Large contact resistance due to Fermi level pinning effect at the interface between metal and Ge strongly restricts the 3 dB bandwidth of Ge photodetectors. In this paper, the Ge PIN photodetectors fabricated on silicon-on-insulator substrates, respectively, with A1 and AI/TaN electrodes are comparatively studied. It is found that 3 dB bandwidth of photodetector with 24 g.m mesa diameter using an A1/TaN stack electrode is improved by four times more than that of the same structure Ge PIN photodetector using an A1 electrode under -1 V bias at 1.55 ~tm. In addition, the dark current is reduced by one order of magnitude, and optical responsivity is enhanced by two times. These results suggest that a thin metallic TaN layer as an electrode can effectively passivate the Ge surface and alleviate the Fermi-level pinning effect, thus reducing the contact resistance and the recombination current at the interface. TaN can be considered as a promising electrode material for Ge device applications.关键词
AI／TaN，接触电阻，Ge/PIN光电探测器，高频特性Key words
A1/TaN/contact resistance/Ge PIN photodetector/high frequency分类
信息技术与安全科学引用本文复制引用
吴政,王尘,严光明,刘冠洲,李成,黄巍,赖虹凯,陈松岩..采用AI／TaN叠层电极提高Si基GePIN光电探测器的性能[J].物理学报,2012,61(18):355-360,6.基金项目
国家重点基础研究发展计划（批准号：2012CB933503）、国家自然科学基金（批准号：61036003,61176092）、中央高校基本科研业务费（批准号：2010121056）和教育部博士项目基金（批准号：20110121110025）资助的课题. （）
