物理学报2012，Vol.61Issue(20)：323-329,7.
辐照下背栅偏置对部分耗尽型绝缘层上硅器件背栅效应影响及机理分析
Back-gate bias effect on partially depleted SOI/MOS back-gate performances under radiation condition
摘要
Abstract
According to the partially depleted SOI/MOS device's band gap, starting with the electric field, which is a factor of back-gate charge stack, we combine SOI device capacitance model and flat capacitance model for finding the way to keep electric field at the interface of Si/Si02, and build a back-gate bias model. For validating the new model, we use alloy-agglomeration at the back gate. After radiation experiments, we compare the results of back-gate effect on NMOS with those on PMOS. It is concluded that as far as NMOS is concerned, negative voltage at back-gate can eliminate the back-gate effect which influence the performance of device, and improves the performance of front-gate. However negative voltage at back-gate makes the performance of PMOS worse. Therefore, when we use the back-gate bias to improve the performance of device, we must consider the performances of NMOS and PMOS and compromise the choice of the voltage which is applied to the back-gate. This research supplies not only a design scheme for hardening back-gate effect of SOI devices under radiation condition, but also a support in theory for integrated circuit design and manufacture, which is used in space.关键词
绝缘层上硅器件/总剂量效应/背栅效应/背栅偏置Key words
silicon on insulation/total dose effect/back-gate effect/back-gate bias分类
信息技术与安全科学引用本文复制引用
周昕杰,李蕾蕾,周毅,罗静,于宗光..辐照下背栅偏置对部分耗尽型绝缘层上硅器件背栅效应影响及机理分析[J].物理学报,2012,61(20):323-329,7.基金项目
SOI研发中心基金,(批准号：20106250XXX),宇航高可靠研发项目,(批准号：XXX7116X)和江苏省“333”科研项目,(批准号：BRA2011115)资助的课题. （批准号：20106250XXX）
