物理学报2012，Vol.61Issue(20)：441-446,6.
新型双异质结高电子迁移率晶体管的电流崩塌效应研究
Investigation on the current collapse effect of AIGaN/GaN/InGaN/GaN double- heterojunction HEMTs
摘要
Abstract
A series of A1GaN/GaN/InGaN/GaN double-heterojunction high-electron-mobility-transistors (DH-HEMT) is fabricated with GaN channel layer thicknesses from 6 nm to 20 nm by two-dimensional (2D) numerical simulations. A new idea for optimizating of DH-HEMT structure is proposed. The hot electron effect and self-heating effect are investigated by using hydrodynamic model. Current collapse and negative differential conductance are observed to be directly relevant to GaN channel layer thickness. DH-HEMT with thicker GaN channel layer can confine electrons better in channel, which significantly diminishes the penetration ability of hot electrons from channel layer to buffer layer under high voltage. Increasing the thickness of GaN channel layer appropriately can effectively restrict current collapse and negative differential conductance, and consequently improve device performance under high voltage condition.关键词
双异质结高电子迁移率晶体管/电流崩塌/热电子效应/自加热效应Key words
double-heterojunction high-electron-mobility-transistors/current collapse/hot electron effect/self-heating effect分类
信息技术与安全科学引用本文复制引用
余晨辉,罗向东,周文政,罗庆洲,刘培生..新型双异质结高电子迁移率晶体管的电流崩塌效应研究[J].物理学报,2012,61(20):441-446,6.基金项目
国家自然科学基金,(批准号：11104150,60906045)和江苏省自然科学基金,(批准号：BK2010571)资助的课题. （批准号：11104150,60906045）
