物理学报2012，Vol.61Issue(21)：424-431,8.
pMOS器件直流应力负偏置温度不稳定性效应随器件基本参数变化的分析
Dependence of the DC stress negative bias temperature instability effect on basic device parameters in pMOSFET
摘要
Abstract
To analyze the dependence of the DC stress negative bias temperature instability (NBTI) effect on basic device paraments, such as the channel length, the gate oxide thickness, the doping concentration, we solve the hydrogen molecule drift-diffusion model of NBTI together with the semiconductor device equations. The results are compared with the existing experimental data and the basic laws and physics of devices, which is necessary for reliability studies of NBTI. The analysis results show that NBTI effect is not affected by the channel length change, but maily by the thickness of the gate oxide layer. Gate oxide thickness thinning and gate oxide layer electric field enhancement effect are consistent, which determines the device degradation in the manner of exponential law. With channel doping concentration increasing, NBTI effect will be reduced, which is because the device channel surface hole concentration is reduced, however with the doping concentration increases to such a value that the device source drain leakage current is very low (low leakage device), the MBTI effect is obviously enhanced. These are helpful for understanding NBTI and designing the high performance device.关键词
pMOS器件/负偏压温度不稳定性/二维器件模拟/漂移扩散模型Key words
pMOSFET/negative bias temperature instability/technology computer aided design/reaction-diffusion model分类
信息技术与安全科学引用本文复制引用
曹建民,贺威,黄思文,张旭琳..pMOS器件直流应力负偏置温度不稳定性效应随器件基本参数变化的分析[J].物理学报,2012,61(21):424-431,8.基金项目
国家自然科学基金青年科学基金,(批准号：11109052) （批准号：11109052）
深圳市基础研究计划,(批准号：JC201005280558A,JC201005280565A)资助的课题. （批准号：JC201005280558A,JC201005280565A）
