物理学报2012，Vol.61Issue(21)：498-503,6.
V2O5电极修饰对C60/Pentacene双层异质结场效应晶体管性能的影响
The influence of modified electrodes by V2O5 film on the performance of ambipolar organic field-effect transistors based on C60/Pentacene
摘要
Abstract
C60/Pentacene-based ambipolar organic heterostructure field-effect transistors (AOFETs) with Al source-drain (S/D) electrodes modified by inserting a transition metal oxide (V2O5) layer are fabricated. Compared with the device without V2O5 modified layer, the modified device shows good ambipolar characteristics with a hole mobility of 8.6× 10-2 cm2/V·s-1 and an electron mobility of 6.4× 10-2 cm2/V·s-1, and threshold voltages of 25 and -25 V, respectively. These performance improvements are ascribed to the presence of V2O5 layer at the Pentacene/Al interface which significantly reduces the source/drain contact resistance, increases the holes injection and makes electronic and hole injection close to balance. This result indicates that modified electrodes by V2O5 film is an effective approach to fabricating low cost and high performance AOFETs for realizing commercial applications.关键词
有机场效应晶体管/双极型/异质结/过渡金属氧化物Key words
organic field-effect transistors/ambipolar/heterostructure/a transition metal oxide分类
化学化工引用本文复制引用
赵赓,程晓曼,田海军,杜博群,梁晓宇,吴峰..V2O5电极修饰对C60/Pentacene双层异质结场效应晶体管性能的影响[J].物理学报,2012,61(21):498-503,6.基金项目
国家自然科学基金（批准号：61076065）和天津市自然科学基金项目（批准号：07JCYBJC12700）资助的课题. （）
