无线电工程2012，Vol.42Issue(11)：40-43,4.
RF MEMS开关的设计分析
Design and Analysis of RF MEMS Switches
石国超 1纪学军1
作者信息
- 1. 中国电子科技集团公司电子第五十四研究所,河北石家庄050081
- 折叠
摘要
Abstract
With respect to MEMS switches with low insertion loss and high isolation,the structures of cantilever MEMS switches and capacitive MEMS switches are introduced,and the operation principle,equivalent circuit model and manufacturing process of a shunt capacitive RF MEMS switch are described.Simulation result shows that when the switch is in "ON" state,the insertion loss is less than-0.3 dB within 40 GHz;and when the switch is in "OFF" state,an isolation of more than-20 dB can be achieved within 20~40 GHz.关键词
射频微机电系统/开关/隔离度/插入损耗Key words
RF MEMS/switch/isolation/insertion loss分类
信息技术与安全科学引用本文复制引用
石国超,纪学军..RF MEMS开关的设计分析[J].无线电工程,2012,42(11):40-43,4.
