陕西科技大学学报（自然科学版）2012，Vol.30Issue(4)：22-26,5.
BiFeO3薄膜的图案化制备及性能研究
Preparation and properties of patterning BiFeO3 thin films
摘要
Abstract
Using UV lithography (A = 184. 9 nm), the deposited octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs) on (111) silicon substrates was optically etched to form the pattern through a photomask. The patterning BiFeO3 thin films were prepared on the functional OTS-SAMs by sol-gel method. At the same time, the properties of BiFeO3 thin films were also studied. The results indicate that the as-prepared patterning BiFeO3 thin films were rhombohedrally distorted perovskite structure. The pattern shows the clear boundaries and the width is 200 μm. At 385 kV/cm, the maximum testing electric field, the obtained hysteresis loop has the better symmetry and saturation. The remanent polarization is 0. 17 μC/cm2 , the saturation polarization is 3. 8 μC/cm2 and the coercive strength is 19 kV/cm. In the frequency range of 1 kHz~l MHz, the dielectric constant decreases gradually as the frequency increases and the dielectric loss is lower.关键词
BiFeO3/薄膜/铁电性/介电性/图案化Key words
BiFeO3/ thin films/ ferroelectricity/ dielectric property/ patterning分类
化学化工引用本文复制引用
谈国强,赵高扬,王艳,程蒙,任慧君..BiFeO3薄膜的图案化制备及性能研究[J].陕西科技大学学报（自然科学版）,2012,30(4):22-26,5.基金项目
国家自然科学基金项目(50872077) （50872077）
