原子与分子物理学报2012，Vol.29Issue(4)：708-716,9.DOI:10.3969/j.issn.1000-0364.2012.04.026
应变纤锌矿GaN/AlxGa1-xN柱形量子点中类氢施主杂质态结合能的压力效应
Influence of hydrostatic pressure on binding energy of hydrogenic donor impurity states in a strain wurtzite GaN/AlxGa1-xN cylindrical quantum dot
摘要
Abstract
Within the effective-mass and finite potential barrier approximation, the binding energy of a hydrogenic donor impurity state as functions of the hydrostatic pressure, impurity position and the structural parameters of quantum dot(QD)( height, radius and Al content) is investigated theoretically for a strained wurtzite GaN/AlxGa1-xN cylindrical QD via a variational procedure, including the strong built-in electric field effect and strain dependence of material parameters. Numerical results show that the binding energy nearly linearly increases with increasing the applied hydrostatic pressure, and the pressure has a remarkable influence on the donor binding energy when the QD size is small. Because of the effect of the applied hydrostatic pressure the donor binding energies are decreased monotonously and then sensitive to the QD height and QD radius. Whereas, the donor binding energies are increased lowly and then insensitive to the increase of Al content when the hydrostatic pressure is increased. The binding energy of a hydrogenic donor impurity state has a maximum value with moving the impurity position from the left interface of QD to the right interface along the growth direction, and the position of the maximum value is located at the right side of the QD whether the hydrostatic pressure is considered or not. And the maximum is shifted toward the centre of QD as a result of the applied hydrostatic pressure.关键词
量子点/类氢施主杂质/结合能/流体静压力Key words
quantum dot, hydrogenic donor impurity, binding energy, hydrostatic pressure分类
数理科学引用本文复制引用
郑冬梅,王宗篪..应变纤锌矿GaN/AlxGa1-xN柱形量子点中类氢施主杂质态结合能的压力效应[J].原子与分子物理学报,2012,29(4):708-716,9.基金项目
国家自然科学基金(11102100) （11102100）
