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Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma

Zhang Xu Cheng Yan Wu Liangcai Song Zhitang Feng Songlin Rao Feng Liu Bo Peng Cheng Zhou Xilin Yao Dongning Guo Xiaohui Song Sannian Wang Liangyong

半导体学报（英文版）2012，Vol.33Issue(10)：10-15,6.

半导体学报（英文版）2012，Vol.33Issue(10)：10-15,6.DOI:10.1088/1674-4926/33/10/102003

Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma

Zhang Xu ¹Cheng Yan ²Wu Liangcai ³Song Zhitang ³Feng Songlin ³Rao Feng ³Liu Bo ³Peng Cheng ³Zhou Xilin ³Yao Dongning ¹Guo Xiaohui ²Song Sannian ³Wang Liangyong³

作者信息

1. State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
2. Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
3. State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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摘要

Abstract

The dry etching characteristic of Al1.3Sb3Te film was investigated by using a CF4/Ar gas mixture.The experimental control parameters were gas flow rate into the chamber,CF4/Ar ratio,the O2 addition,the chamber background pressure,and the incident RF power applied to the lower electrode.The total flow rate was 50 sccm and the behavior of etch rate of Al1.3Sb3Te thin films was investigated as a function of the CF4/Ar ratio,the O2 addition,the chamber background pressure,and the incident RF power.Then the parameters were optimized.The fast etch rate was up to 70.8 nm/min and a smooth surface was achieved using optimized etching parameters of CF4 concentration of 4％,power of 300 W and pressure of 80 mTorr.

关键词

Al1.3Sb3Te/ dry etching/ CF4/Ar gas mixture/ etch rate

Key words

Al1.3Sb3Te/ dry etching/ CF4/Ar gas mixture/ etch rate

引用本文复制引用

Zhang Xu,Cheng Yan,Wu Liangcai,Song Zhitang,Feng Songlin,Rao Feng,Liu Bo,Peng Cheng,Zhou Xilin,Yao Dongning,Guo Xiaohui,Song Sannian,Wang Liangyong..Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma[J].半导体学报（英文版）,2012,33(10):10-15,6.

基金项目

Project supported by National Key Basic Research Program of China (Nos.2010CB934300,2011CBA00607,2011CB932800),the National Integrated Circuit Research Program of China (No.2009ZX02023-003),the National Natural Science Foundation of China (Nos.60906004,60906003,61006087,61076121),and the Science and Technology Council of Shanghai,China (No.1052nm07000). （Nos.2010CB934300,2011CBA00607,2011CB932800）

半导体学报（英文版）

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ISSN：1674-4926

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