半导体学报（英文版）2012，Vol.33Issue(10)：25-28,4.DOI:10.1088/1674-4926/33/10/103002
An aluminum nitride photoconductor for X-ray detection
An aluminum nitride photoconductor for X-ray detection
摘要
Abstract
An AlN photoconductor for X-ray detection has been fabricated,and its response to X-ray irradiation intensity is studied.The photoconductor has a very low leakage current,less than 0.1 nA at an applied voltage of 100 V in the absence of X-ray irradiation.The photocurrent measurement results clearly reveal that the photocurrent is proportional to the square root of the X-ray irradiation intensity,and under relatively high irradiation the photocurrent can reach values one order of magnitude larger than the dark current when a voltage of 100 V is applied across the AlN photoconductor.By using the ABC model the dependence of the photocurrent on the X-ray irradiation intensity is analyzed,and a reasonable interpretation of the physical mechanism is obtained.关键词
AlN photoconductor/ X-ray detection/ recombinationKey words
AlN photoconductor/ X-ray detection/ recombination引用本文复制引用
Wang Xinjian,Song Hang,Li Zhiming,Jiang Hong,Li Dabing,Miao Guoqing,Chen Yiren,Sun Xiaojuan..An aluminum nitride photoconductor for X-ray detection[J].半导体学报（英文版）,2012,33(10):25-28,4.基金项目
Project supported by the National Natural Science Foundation of China (Nos.51072196,51072195). （Nos.51072196,51072195）
