半导体学报（英文版）2012，Vol.33Issue(10)：29-32,4.DOI:10.1088/1674-4926/33/10/104001
An InP-based heterodimensional Schottky diode for terahertz detection
An InP-based heterodimensional Schottky diode for terahertz detection
摘要
Abstract
We present an InP-based heterodimensional Schottky diode (HDSD),which has so far never been reported in the literature.Compared to a GaAs-based HDSD,the InP-based HDSD is expected to have better high frequency performance and operational conditions resulting from its higher mobility and concentration of 2D electron gas (2DEG) as well as its smaller Schottky barrier height.The cutoff frequency of the InP-based HDSD obtained by the AC measurement is more than 500 GHz,which shows its potential application in terahertz detection.关键词
Schottky barrier diode/ heterodimensional Schottky diode/ InP/ terahertz detectionKey words
Schottky barrier diode/ heterodimensional Schottky diode/ InP/ terahertz detection引用本文复制引用
Wen Ruming,Sun Hao,Teng Teng,Li Lingyun,Sun Xiaowei..An InP-based heterodimensional Schottky diode for terahertz detection[J].半导体学报（英文版）,2012,33(10):29-32,4.基金项目
Project supported by the National Basic Research Program of China (No.2009CB320207) and the Chinese Academy of Sciences (No.YYYJ-1123-3). （No.2009CB320207）
