电子学报2012，Vol.40Issue(11)：2188-2193,6.DOI:10.3969/j.issn.0372-2112.2012.11.008
片上栅氧经时击穿失效监测电路与方法
An On-Chip Circuit for Monitoring Failure Due to TDDB
摘要
Abstract
In the electronic systems, the failure of a module or circuit often results in catastrophic consequences. The failure of these modules or circuits is mostly caused by device failure mechanisms, including TDDB (time dependent dielectric breakdown) ,hot carrier injection,negative bias temperature instability,etc.This paper presents an on-chip real-time prediction circuit and method for TDDB. When the circuit under test is failure due to TDDB, the prediction circuit is capable of issuing a warning signal. The prediction circuit,designed by a standard CMOS process,occupies a small silicon area and does not share any signal with the circuits under test, therefore, the possibility of interference with the surrounding circuits is safely excluded. The circuit is taped out in 0.18 micron process, and its performance is met the design requirements.关键词
栅氧经时击穿/实时/可靠性/预报/寿命Key words
TDDB(time dependent dielectric breakdown)/ real-time/ reliability/prediction/ lifetime分类
信息技术与安全科学引用本文复制引用
辛维平,庄奕琪,李小明..片上栅氧经时击穿失效监测电路与方法[J].电子学报,2012,40(11):2188-2193,6.基金项目
国家自然科学基金(No.60376023) （No.60376023）
