电子器件2012，Vol.35Issue(5)：489-492,4.DOI:10.3969/j.issn.1005-9490.2012.05.001
基于结构函数的功率MOSFET器件热阻研究
Research on Thermal Resistance in the Power MOSFET Device Based on Structure Function
肖超 1王立新1
作者信息
- 1. 中国科学院微电子研究所,北京100029
- 折叠
摘要
Abstract
The thermal resistance is an important parameter of power MOSFET device, which is used to reflect the ability of heat dissipation.It is worthy to accurately measuring and analyzing the thermal resistance of power MOSFET device.Two kinds of cumulative structure function are obtained by two experiments under different conditions.The separation point of two kinds of cumulative structure function can be specified as the thermal resistance of junction to case of power MOSFET device.This method is simple, accurate and repetitive and the experiment result 0.5 K/W accords well with the Finite Element Method 0.44 K/W.Compared two different differential structure functions and the shift of one differential structure function is identified.Further research based SAM demonstrates solder layer void causes the shift of differential structure function, which can be used to identify the technology of device.关键词
功率MOSFET器件/热阻/结构函数/超声波扫描/焊料空洞Key words
power MOSFET device/ thermal resistance/ structure function/ SAM/ solder layer void分类
信息技术与安全科学引用本文复制引用
肖超,王立新..基于结构函数的功率MOSFET器件热阻研究[J].电子器件,2012,35(5):489-492,4.
