发光学报2012，Vol.33Issue(9)：923-928,6.DOI:10.3788/fgxb20123309.0923
ZnCuInS量子点的变温光致发光
Temperature-dependent Photoluminescence of ZnCuInS Quantum Dots
摘要
Abstract
The photoluminescence (PL) spectra of ZnCuInS quantum dots (QDs) were measured in the temperature range from 100 to 300 K. The temperature dependences of the PL energy, linewidth, and intensity of the ZnCuInS QDs were investigated in detail. An anomalous increase in band gap of ZnCuInS QDs with temperature was observed. The full width at half maximum of the PL and thermal activation energy Ea of ZnCuInS QDs were 300 and 100 meV, respectively. These results suggested that the PL in the ZnCuInS QDs originated from the recombination of many kinds of defect-related emission centers in the interior and on the surface of the QDs.关键词
ZnCuInS/量子点/纳米晶/变温光致发光Key words
ZnCuInS/ quantum dots/ nanocrystals/ temperature-dependent photoluminescence分类
数理科学引用本文复制引用
陈肖慧,王秀英,赵家龙..ZnCuInS量子点的变温光致发光[J].发光学报,2012,33(9):923-928,6.基金项目
国家自然科学基金(51102227)资助项目 （51102227）
