硅酸盐通报2012，Vol.31Issue(5)：1243-1246,4.
GaN纳米线的溶胶-凝胶法制备及表征
Characteristic Analysis and Preparation of GaN Nanowires by Sol-gel Method
摘要
Abstract
GaN nanowires were successfully prepared by Sol-gel method, which is a low cost and easily operated method. The precursor sol was synthesized by using gallium nitrate as Ga source and citric acid as complexing agent. To whirl coating on Si (111) substrates covered with catalyst. GaN nanowires were formed in ammonia environment. Using XRD, SEM, TEM, EDS to characterize and analyze GaN nanowires. The result shows that the nanowires prepared have good crystallinity and its morphology are good in 1000℃. We also study the growth mechanism of catalytically grown GaN nanowires.关键词
GaN纳米线/溶胶-凝胶/生长机理Key words
GaN nanowires/Sol-gel/growth mechanism分类
信息技术与安全科学引用本文复制引用
景钰洲,王雪文,杨怡,赵武,邓周虎..GaN纳米线的溶胶-凝胶法制备及表征[J].硅酸盐通报,2012,31(5):1243-1246,4.基金项目
国家自然科学面上基金项目(61076002) （61076002）
陕西省教育厅科学研究计划项目(2010JK848) （2010JK848）
