量子电子学报2012，Vol.29Issue(5)：597-601,5.DOI:10.3969/j.issn.1007-5461.2012.05.014
GaAs量子阱中退极化效应对光学整流的影响
Influence of depolarization effect on optical rectification in GaAs quantum well
彭飞1
作者信息
- 1. 南通大学江苏省专用集成电路设计重点实验室,江苏南通 226019
- 折叠
摘要
Abstract
The influence of the depolarization effect on the optical rectification in electric-field-biased GaAs quantum well is studied using relaxation time approximation and a compact density-matrix approach. The results obtained show that the depolarization effect shifts the position of the resonance peak. For three different bias fields, F = 3×104 V/cm, 4 x 104 V/cm, 8 ×104 V/cm, the peak position is hω = 108.48 meV, 108.92 meV, 111.99 meV, respectively. The shift of the peak position is 5.96 meV, 5.99 meV and 6.28 meV, respectively, which increases with the bias field.关键词
非线性光学/光学整流/退极化效应/量子阱Key words
nonlinear optics/ optical rectification/ depolarization effect/ quantum well分类
数理科学引用本文复制引用
彭飞..GaAs量子阱中退极化效应对光学整流的影响[J].量子电子学报,2012,29(5):597-601,5.
