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S波段3GW相对论速调管放大器的设计

陈永东 金晓 李正红 吴洋 黄华

强激光与粒子束2012,Vol.24Issue(9):2151-2154,4.
强激光与粒子束2012,Vol.24Issue(9):2151-2154,4.DOI:10.3788/HPLPB20122409.2151

S波段3GW相对论速调管放大器的设计

Theoretical design of 3 GW S-band relativistic klystron amplifier

陈永东 1金晓 2李正红 3吴洋 2黄华2

作者信息

  • 1. 中国工程物理研究院研究生部,北京 100086
  • 2. 中国工程物理研究院应用电子学研究所,高功率微波重点实验室,四川绵阳 621900
  • 3. 四川理工学院,四川自贡643000
  • 折叠

摘要

Abstract

The introduction of bunching cavities can significantly increase the gain of relativistic klystron amplifier, and correspondingly the power of the seeding microwave can be reduced to a very low level. Though higher gain can be obtained with more bunching cavities, the self-exciting problem will seriously disturb the working mode in the device. A special structure is introduced to deal with such problem. Based on the engineering requirement, a S-band of 3 GW relativistic klystron amplifier is designed with the seeding power 20 kW. In the simulation, the fundamental current modulation depth is 80% and the output microwave power reaches 3. 3 GW with the seeding power of kilowatts.

关键词

高功率微波/相对论速调管放大器/高增益/粒子模拟

Key words

high power microwave/ relativistic klystron amplifier/ high gain/ PIC simulation

分类

信息技术与安全科学

引用本文复制引用

陈永东,金晓,李正红,吴洋,黄华..S波段3GW相对论速调管放大器的设计[J].强激光与粒子束,2012,24(9):2151-2154,4.

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