强激光与粒子束2012，Vol.24Issue(10)：2502-2506,5.DOI:10.3788/HPLPB20122410.2502
光导开关Blumlein型脉冲网络电压传输效率
Voltage transfer efficiency of Blumlein- pulse forming networks based on photoconductive semiconductor switches
摘要
Abstract
The factors affecting the voltage transfer efficiency of Blumlein pulse forming networks (PFNs) based on photo-conductive semiconductor switch (PCSS) were preliminarily studied in experiment to get rectangle high voltage pulses on high impedance loads with high energy transfer efficiency and high repetition rate. The Blumlein-PFN is composed of the ceramic capacitor, aluminum strip and GaAs-PCSS. The Blumlein-PFN's impedance is 7. 8 Ω with an electric length of 32. 6 ns. The relations of voltage transfer efficiency to PCSS electric field and laser energy were studied on a matched load. Experiment results shows that high on-resistance is the main factor affecting the voltage transfer efficiency. When the electric field is 25. 1 kV/cm, the efficiency is 75. 6% with an on-resistance of 2. 88 Ω at a laser energy of 3. 5 mJ and 83. 2% with an on-resistance of 1. 89 Ω at a laser energy of 30. 4 mJ.关键词
Blumlein型脉冲形成网络/光导开关/电压传输效率/非线性模式Key words
Blumlein-pulse forming network/ photoconductive semiconductor switch/ voltage transfer efficiency/ nonlinear mode分类
信息技术与安全科学引用本文复制引用
马勋,邓建军,刘金锋,刘宏伟,李洪涛..光导开关Blumlein型脉冲网络电压传输效率[J].强激光与粒子束,2012,24(10):2502-2506,5.基金项目
国家自然科学基金项目(50837004) （50837004）
国家自然科学基金青年基金项目(51007085) （51007085）
中国工程物理研究院科学发展基金项目(2012B0402054,2011B0402010) （2012B0402054,2011B0402010）
中国工程物理研究院流体物理研究所发展基金项目(SFZ20110202) （SFZ20110202）
