强激光与粒子束2012，Vol.24Issue(11)：2599-2603,5.DOI:10.3788/HPLPB20122411.2599
532nm纳秒激光辐照下的单晶硅表面微结构及荧光特性
Surface microstructures and photoluminescence characteristics of monocrystalline sillicon irradiated by 532 nm nanosecond laser
摘要
Abstract
The evolution of silicon surface microstructures irradiated by Nd: YAG nanosecond laser pulses in the air under different laser fluences and scanning speeds was studied. The scanning electron microscope (SEM) images show that corrugated structure and porous structure are formed on the silicon surfaces after laser pulse irradiation. The photoluminescence (PL) spectra indicate a peak of luminescence at 710 nm. After corroding the Si(), on the silicon surfaces with hydrofluoric acid, the intensity of the luminescence peak greatly reduces, which proves that Si(), plays an important role in photoluminescence enhancement. The energy dispersive X-ray spectrum (EDS) shows that the amount of oxygen incorporated into the silicon surfaces depends on the laser fluence. Oxygen element in silicon surfaces has an important impact on enhancing PL emission.关键词
激光辐照/单晶硅/微构造/荧光特性Key words
laser irradiation/ crystalline silicon/ surface microstructure / phololummescence characteristics分类
信息技术与安全科学引用本文复制引用
常利阳,李晓红,邱荣,王俊波..532nm纳秒激光辐照下的单晶硅表面微结构及荧光特性[J].强激光与粒子束,2012,24(11):2599-2603,5.基金项目
国家自然科学基金项目(10875099) （10875099）
