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偏压对磁控溅射沉积立方氮化硼薄膜的影响

徐锋 左敦稳 张旭辉 户海峰 王珉

人工晶体学报2012,Vol.41Issue(4):853-857,5.
人工晶体学报2012,Vol.41Issue(4):853-857,5.

偏压对磁控溅射沉积立方氮化硼薄膜的影响

Effect of Substrate Bias on the cBN Film Deposition by Magnetron Sputtering

徐锋 1左敦稳 1张旭辉 1户海峰 1王珉1

作者信息

  • 1. 南京航空航天大学机电学院,南京210016
  • 折叠

摘要

Abstract

The proper substrate bias voltage is the one of the most important factors for cBN deposition. The effect of substrate bias on the physical vapor deposition course was analyzed. Monte Carlo method is used to simulate the ion bombardment. The simulation and experiment results shows that with the increase of ion bombard energy, the range and depth of ion bombard increase obviously which is good for the nuclear and growth of cBN. But overlarge ion bombard will lead to the mismatching of nitrogen and boron and decrease of quality of cBN film. The proper nitrogen adding to the atmosphere will make up for the nitrogen lose as the ion bombard to increase the cubic phase of boron nitride film.

关键词

立方氮化硼薄膜/磁控溅射/衬底偏压/离子轰击/立方相

Key words

cubic boron nitride film/ magnetron sputtering/ substrate bias/ ion bombard/ cubic phase

分类

通用工业技术

引用本文复制引用

徐锋,左敦稳,张旭辉,户海峰,王珉..偏压对磁控溅射沉积立方氮化硼薄膜的影响[J].人工晶体学报,2012,41(4):853-857,5.

基金项目

国家自然科学基金资助项目(51005117) (51005117)

人工晶体学报

OA北大核心CSCDCSTPCD

1000-985X

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