人工晶体学报2012，Vol.41Issue(4)：863-867,876,6.
宽温区内ZnO纳米线的CVD可控生长方法研究
Controlled Synthesis of ZnO Nanowires in a Wide Temperature Range by CVD Method
摘要
Abstract
ZnO nanowires were controlled synthesized based on CVD mechanism using the thermal evaporation method in a wide temperature range. Scanning electron microscopy (SEM) has been used to characterize the morphology of ZnO nanowires. In that way, the influence of reaction temperature and the heating time on the morphology of the ZnO nanostructure were characterized by photoconductive UV detector. The photoelectric property of the ZnO nanowires were studied. The research work demonstrates that, using CVD method, ZnO nanowires could synthesize in a wide reaction temperature range above 419.51 under the atmospheric pressure, rather than at a very specific temperature point. The key solution for realizing the controlled growth in the wide temperature range is to optimize and matchup the heating time and reaction temperature. The measured photocurrent of the device under UV illumination shows the outstanding optoelectronic response properties of the ZnO nanowires.关键词
ZnO纳米线/CVD生长法/宽温区生长/光电导型紫外线探测器Key words
ZnO nanowires/ CVD method/ wide temperature range/ photoconductive UV detector分类
通用工业技术引用本文复制引用
马可,贺永宁,张松昌,刘卫华..宽温区内ZnO纳米线的CVD可控生长方法研究[J].人工晶体学报,2012,41(4):863-867,876,6.基金项目
国家自然科学基金(60876038) （60876038）
