人工晶体学报2012，Vol.41Issue(4)：888-895,8.
直拉单晶硅生长时空洞演化的相场模拟
Phase Field Model of the Dynamics of Growth in Voids during Czochralski Silicon Crystal Growth
摘要
Abstract
A phase field model of void dynamics during CZ silicon crystal growth, combined with the temperature field from finite element method (FEM) , has been developed. This model could simulate the evolution of void's shape and distribution, and the void dynamics at different initial defect concentrations. The simulation results showed that void dynamics followed four stages at different temperature intervals; incubation, nucleation, growth and static. Different from low initial vacancy concentration, void fraction and diameters increased evidently at high concentration. The number of voids whose diameter is over 10 nm has little fluctuation at the temperature to be lower than 980 K.关键词
单晶硅/直拉法/相场模型/数值模拟/空洞Key words
silicon crystal/ Czochralski process/ phase field model/ computer simulation/ void分类
数理科学引用本文复制引用
曾庆凯,关小军,潘忠奔,张怀金,王丽君,禹宝军,刘千千..直拉单晶硅生长时空洞演化的相场模拟[J].人工晶体学报,2012,41(4):888-895,8.基金项目
高等学校博士学科点专项科研基金(200804220021) （200804220021）
