人工晶体学报2012，Vol.41Issue(4)：977-981,5.
直流反应磁控溅射法制备ZnO: Zr透明导电薄膜
Preparation of Transparent Conducting ZnO∶ Zr Films Deposited by DC Reactive Magnetron Sputtering
摘要
Abstract
Transparent conducting ZnO∶ Zr films were synthesized by DC reactive magnetron sputtering technique using Zn∶ Zr targets.The effect of deposition pressure on the structural,morphological,electrical and optical properties was analyzed.The experimental results show that the deposited ZnO∶ Zr films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate.The crystallinity,morphology,resistivity and growth rate greatly depend on deposition pressure while the optical properties including transmittance, optical band gap and refractive index do not change much with the variation of deposition pressure.The film deposited at the optimal pressure of 2 Pa has a resistivity of 2.0 × 10-3 Ω · cm with an average transmittance of 83.2％ in the wavelength of 500-800 nm and an average refractive index of 1.97 in the wavelength of 450-850 nm.关键词
直流反应磁控溅射/ZnO∶ Zr薄膜/透明导电薄膜/沉积压强Key words
DC reactive magnetron sputtering/ZnO∶ Zr films/transparent conducting films/deposition pressure分类
信息技术与安全科学引用本文复制引用
张化福,类成新,刘汉法,袁长坤..直流反应磁控溅射法制备ZnO: Zr透明导电薄膜[J].人工晶体学报,2012,41(4):977-981,5.基金项目
Project supported by the Natural Science Foundation of Shandong Province(ZR20O9GQ011) （ZR20O9GQ011）
