人工晶体学报2012，Vol.41Issue(5)：1195-1199,5.
HgI2晶体最低生长温度的确定
Study on the Lowest Growth Temperature of Mercuric Iodide Crystal
摘要
Abstract
The activation energy of HgI2 molecule diffusion on (001) was investigated to be 0. 33 eV according to step-flow growth kinetics of vicinal surface in vapour. The lowest growth temperature, Tmin, for the optimization of crystal growth was then deduced under different sublimation temperature. The results show that the value calculated is in good accordance with that of the actual HgI2 crystal growth by physical vapour deposition, which is beneficial to craft adjust to HgI2 single-crystal, poly-crystalline thin film and single-crystal film.关键词
碘化汞/物理气相沉积/最低生长温度Key words
mercuric iodide/ PVD/ lowest growth temperature分类
化学化工引用本文复制引用
许岗,谷智,坚增运,惠增哲,刘翠霞,张改..HgI2晶体最低生长温度的确定[J].人工晶体学报,2012,41(5):1195-1199,5.基金项目
国家自然科学基金(51071115,51072155) （51071115,51072155）
西安工业大学凝固理论与功能材料科研创新团队基金 （）
西北工业大学基础研究基金(JC20110244) （JC20110244）
