人工晶体学报2012，Vol.41Issue(5)：1331-1336,6.
偏压对Ge/Si单量子点电流分布的影响
Effect of Bias on the Current Distribution of Ge/Si Single Quantum Dot
张丽红 1王茺 1杨杰 1杨涛 1杨宇1
作者信息
- 1. 云南大学光电信息材料研究所,昆明650091
- 折叠
摘要
Abstract
The electronic properties of Ge/Si quantum dots (QDs) were studied by scan probe microscopy (SPM). The results indicated that the current signals in the scan region are unrecoverable due to the formation of surface oxide layer, when the positive bias voltage is applied on the dome-shaped quantum dots. When negative bias voltage applied, the current distribution within the single quantum dot region holds ring-like characteristics. Two current peaks in each current profile line of a single QD were observed at the QDs hillside. The top of current peaks is truncated with the increasing negative bias, this phenomena is attributed to the saturation of the current resulted from the limitation of the SPM. The statistic of current magnitude shows that the current conduction of Ge/Si QDs in the experiments could be characterized by the thermal electron emission model.关键词
Ge/Si单量子点/导电原子力显微镜/偏压/电学特性Key words
Ge/Si single quantum dots/ conductive atomic force microscopy/ bias voltage/ electrical properties分类
信息技术与安全科学引用本文复制引用
张丽红,王茺,杨杰,杨涛,杨宇..偏压对Ge/Si单量子点电流分布的影响[J].人工晶体学报,2012,41(5):1331-1336,6.
