人工晶体学报2012，Vol.41Issue(5)：1337-1344,8.
镓掺杂氧化锌透明导电薄膜的制备及其性能研究
Preparation and Properties of Gallium-doped Zinc Oxide Transparent Conductive Thin Films
摘要
Abstract
Highly conduct gallium-doped zinc oxide (Ga∶ ZnO)transparent thin films were prepared on the glass substrates by radio-frequency (RF) magnetron sputtering.The deposited films were characterized by X-ray diffraction (XRD),X-ray photoelectron spectroscopy (XPS),four-point probe and spectrophotometer,respectively.The influence of the substrate temperature on the structural,compositional,optical and electrical properties of the films was investigated.The results show that high quality Ga∶ ZnO films oriented with their crystallographic c-axis perpendicular to the substrates are obtained.The crystal structures and optoelectrical properties of the films are highly dependent on the substrate temperature.The Ga∶ ZnO films fabricated at the substrate temperature of 673 K exhibit the best optoelectronic properties,which have the maximum crystallite size (72.6 nm),the lowest resistivity (1.3× 10-3 Ω·cm),the higher average visible transmittance (88.9％) and the highest figure of merit (1.4 ×10-2 S).Furthermore,the energy gap of the films was calculated by extrapolation method.A blue shift of the optical energy gap is observed with an increase in the substrate temperature.关键词
氧化锌薄膜/磁控溅射/光电性能Key words
zinc oxide thin films/ magnetron sputtering/ optoelectrical properties分类
数理科学引用本文复制引用
钟志有,顾锦华,孙奉娄,杨春勇,侯金..镓掺杂氧化锌透明导电薄膜的制备及其性能研究[J].人工晶体学报,2012,41(5):1337-1344,8.基金项目
Project supported by the Natural Science Foundation of Hubei (2011CDB418),the National Natural Science Foundation of China (61002013,11147014),and the Academic Team Foundation (XTZ09003) of SCUN （2011CDB418）
