人工晶体学报2012，Vol.41Issue(5)：1446-1450,5.
n型衬底上双面HIT太阳电池背场的模拟优化
Simulation Optimizing of Back Surface Field of Bifacial HIT Solar Cell on n-type Substrate
摘要
Abstract
The effect of back surface field(BSF) on the photovoltaic characteristics of TCO/a-Si: H(p+ )/ a-Si: H(i)/c-Si(n) /a-Si: H(i) /a-Si: H(n+ ) /TCO heterojunction solar cell was simulated by AMPS-ID software developed by the Pennsylvania State University. The results indicate that thin film silicon materials with the band gap between 1.60 eV and 1.92 eV are more suitable for BSF of bifacial HIT solar cell when the doping concentration of BSF meets NB ≥ 1 × 1018 cm-3. It is also found that the influence of doping concentration of BSF n + layer on the performance of solar cell is restricted by the density of gap state. The density of gap state is bigger, the demand for the doping concentration of BSF is higher.关键词
太阳电池/异质结/背场/模拟Key words
solar cell/ heterojunction/ back surface field/ simulation分类
能源科技引用本文复制引用
张研研,任瑞晨,史力斌..n型衬底上双面HIT太阳电池背场的模拟优化[J].人工晶体学报,2012,41(5):1446-1450,5.基金项目
教育部科学技术重点项目(211035) （211035）
