无机材料学报2012，Vol.27Issue(10)：1112-1116,5.DOI:10.3724/SP.J.1077.2012.12213
溅射气压对直流磁控溅射ZnO∶Al薄膜的影响
Effect of Sputtering Pressure on Al-doped ZnO Films by DC Magnetron Sputtering
摘要
Abstract
Al-doped ZnO (AZO) films were deposited on the glass substrates by direct current magnetron sputtering using different sputtering pressures ranging from 0.2 Pa to 2.2 Pa.Microstructure,phase,electrical and optical properties of AZO films were characterized by X-ray diffraction (XRD),scanning electron microscope (SEM),four-point probe and UV-Vis spectrophotometer,respectively.The results revealed that the deposition rate decreased with the increasing sputtering pressure according to Keller-Simmons model; the crystalline phase of all films was hexagonal wurtzite and the preferred orientation changed with the sputtering pressure; the surface morphology greatly depended on the sputtering pressure and the film deposited at 1.4 Pa showed low resistivity (8.4x10-4 Ω.cm),high average transmission and the highest Q,a criterion factor as the film figure of merit,which was the ratio between the normalized average transmission and the normalized resistivity.关键词
ZnO:Al薄膜/直流磁控溅射/溅射气压/光电性质Key words
Al-doped ZnO films/direct current magnetron sputtering/sputtering pressure/electro-optical property分类
通用工业技术引用本文复制引用
孙可为,周万城,黄珊珊,唐秀凤..溅射气压对直流磁控溅射ZnO∶Al薄膜的影响[J].无机材料学报,2012,27(10):1112-1116,5.基金项目
National Natural Science Foundation of China (51072165) （51072165）
