物理学报2012，Vol.61Issue(23)：416-421,6.
基于表面势的氢化非晶硅薄膜晶体管直流特性研究
DC characteristic research based on surface potential for a-Si : H thin-film transistor
摘要
Abstract
In this paper, based on the surface potential model, taking into account both the deep and tail state distributions simultaneously, and using the simplified Fermi-Dirac function, a unified local-state model is obtained. Using the effective characteristic temperature, the unified current-voltage (l-V) model for a-Si : H thin-film transistor a-Si : H TFT is developed. This model can describes all operating regions including subthreshold region, linear area and saturated zone through a single equation. By comparison with the experimental data, it is shown that this model can accurately describe the current voltage characteristic of the a-Si : H TFT.关键词
非晶硅/表面势/薄膜晶体管/有效特征温度Key words
a-Si/surface potential/TFT/effective characteristic temperature分类
信息技术与安全科学引用本文复制引用
陈晓雪,姚若河..基于表面势的氢化非晶硅薄膜晶体管直流特性研究[J].物理学报,2012,61(23):416-421,6.基金项目
国家自然科学基金（批准号：61274085）资助的课题. （）
