物理学报2012，Vol.61Issue(23)：479-483,5.
分子束外延生长InGaN／A1N量子点的组分研究
Studies on the composition of InGaN/AIN quantum dots grown by molecular beam epitaxy
摘要
Abstract
In this article we report on the green-light wavelength InGaN/A1N quantum dots (QDs) grown by molecular beam epitaxy, and propose a method to determine the composition of the InGaN QDs by combining reflection high-energy electron diffraction in-situ measurement and photoluminescence measurement, in which the strain relaxation and the influences of strain and quantum-confined Stark effect on the exciton energy are taken into consideration.关键词
InGaN/量子点/反射式高能电子衍射Key words
InGaN/quantum dots/reflection high-energy electron diffraction分类
信息技术与安全科学引用本文复制引用
胡懿彬,郝智彪,胡健楠,钮浪,汪莱,罗毅..分子束外延生长InGaN／A1N量子点的组分研究[J].物理学报,2012,61(23):479-483,5.基金项目
国家自然科学基金（批准号：61176015,61176059,60723002,60977022,51002085）、国家重点基础研究发展计划（批准号：2011CB301902,2011CB301903）和国家高技术研究发展计划（批准号：2011AA03A112,2011AA03A106,2011AA03A105）资助的课题. （）
