物理学报2012，Vol.61Issue(23)：498-504,7.
衬底温度对反应磁控溅射W掺杂ZnO薄膜的微观结构及光电性能的影响
Temperature-dependant growth and properties of W-doped ZnO thin films deposited by reactive magnetron sputtering
摘要
Abstract
W-doped ZnO (WZO) thin films for thin film solar cells have been deposited by pulsed direct-current reactive magnetron sput- tering. The microstructures, surface morphologies, optical and electrical properties of WZO thin films are investigated at different substrate temperatures. The experimental results indicate that a proper substrate temperature is the key factor for fabricating high- quality WZO thin films. The surface roughness of WZO thin films increases firstly from 15.65 nm to 37.60 nm, and then decreases from 37.60 nm to 11.07 nm with the increase of substrate temperature. Higher Hall mobility deposited at the higher temperatures is attributed to the compact structure and good crystallization quality. The WZO thin film prepared at the temperature of 325℃ presents excellent optical and electrical properties with an average transmittance of 85.7% in the wavelength range from 400 nm to 1500 nm, a low resistivity of 9.25×10^-3 Ω.cm, a sheet resistance of 56.24 Ω/sq and a high Hall mobility of 11.8 cm2.V-1.s^-1.关键词
反应磁控溅射/ZnO薄膜/W掺杂/衬底温度Key words
reactive magnetron sputtering/ZnO thin films/W-doping/substrate temperature分类
信息技术与安全科学引用本文复制引用
张翅,陈新亮,王斐,闫聪博,黄茜,赵颖,张晓丹,耿新华..衬底温度对反应磁控溅射W掺杂ZnO薄膜的微观结构及光电性能的影响[J].物理学报,2012,61(23):498-504,7.基金项目
国家重点基础研究计划（批准号：2011CBA00705,2011CBA00706,2011CBA00707）、国家高技术研究发展计划（批准号：2009AA050602）、科技部国际合作项目（批准号：2009DFA62580）、天津市应用基础及前沿技术研究计划（批准号：09JCYBJC06900）和中央高校基本科研业务费专项资金项目（批准号：65010341）资助的课题. （）
