信息与电子工程2012，Vol.10Issue(5)：613-615,3.
SOI SONOS EEPROM管电离总剂量辐射效应
Total dose radiation response of SOI SONOS EEPROM transistors
陈正才 1徐大为 1肖志强 1高向东 1洪根深 1徐静 1周淼1
作者信息
- 1. 中国电子科技集团公司第58研究所,江苏无锡214035
- 折叠
摘要
Abstract
0.6 μm SOI SONOS EEPROM transistors were fabricated with 0.6 μm SOI SONOS process, and their current-voltage characteristics both programmed and erased were discussed. The threshold window voltage was 5.04 V before radiation. Then these EEPROM transistors were radiated with Co-60 γ -ray at various radiation levels. It was showed that the EEPROM still had a threshold window of 0.7 V when the total dose reached 500 Krad(Si), satisfying the requirement of the memory circuit. The mechanism of the threshold shift due to total dose radiation was analyzed.关键词
SONOS EEPROM器件/电离总剂量辐射/绝缘体上硅Key words
SONOS EEPROM/ total dose radiation/ Silicon On Insulator分类
信息技术与安全科学引用本文复制引用
陈正才,徐大为,肖志强,高向东,洪根深,徐静,周淼..SOI SONOS EEPROM管电离总剂量辐射效应[J].信息与电子工程,2012,10(5):613-615,3.
