原子能科学技术2012，Vol.46Issue(z1)：174-179,6.
正脉冲电镀法制备φ33mm模拟镍源
Preparation of φ33 mm Simulative Source of Nickel With Pulse-Plating Technology
胡睿 1阚文涛 1董文丽 1罗顺忠 1钟正坤 1杨玉青1
作者信息
- 1. 中国工程物理研究院核物理与化学研究所,四川绵阳621900
- 折叠
摘要
Abstract
The DC constant current power with a magnitude of milliampere has one defect of lower protect voltage. This brought itself not suitable for the preparation of large area and high radioactivity 63Ni. Based on a positive pulse power, the effects from some experiment conditions on the plating results in the simple plating solution were studied. The result shows that 95% of 58Ni deposition rate is gained under the condition of cathode current density of 18 mA/cm2, room temperature, pulse width of frequency of 5 kHz and plating time of 2. 5 h.关键词
脉冲电镀/58Ni/沉积率Key words
pulse-plating/ 58Ni/ deposition rate分类
能源科技引用本文复制引用
胡睿,阚文涛,董文丽,罗顺忠,钟正坤,杨玉青..正脉冲电镀法制备φ33mm模拟镍源[J].原子能科学技术,2012,46(z1):174-179,6.
