原子能科学技术2012，Vol.46Issue(z1)：592-597,6.
基于正交设计的BiMOS运算放大器瞬时电离辐射效应影响因素分析
Analysis of Affecting Factors of Transient Ionizing Radiation Effects on BiMOS Op-amp by Orthogonal Design
马强 1林东生 1金晓明 1陈伟 1杨善潮 1李瑞宾 1齐超 1王桂珍1
作者信息
摘要
Abstract
Using the orthogonal design method to arrange tests, a satisfactory result can be acquired with less experiments. The transient ionizing radiation effects experiments on BiMOS op-amp CA3140 were done on "Qiangguang-1" accelerator in this work to study the impact of different factors on the recovery time of CA3140 by transient ionizing irradiation. The sub-sequence and the significant level of the factors for the recovery time, as well as the worst bias conditions for CA3140 under transient ionizing irradiation were obtained.关键词
正交设计/瞬时电离辐射/BiMOS/最劣偏置Key words
orthogonal design/ transient ionizing irradiation/ BiMOS/ worst bias分类
信息技术与安全科学引用本文复制引用
马强,林东生,金晓明,陈伟,杨善潮,李瑞宾,齐超,王桂珍..基于正交设计的BiMOS运算放大器瞬时电离辐射效应影响因素分析[J].原子能科学技术,2012,46(z1):592-597,6.
