中国电机工程学报2012，Vol.32Issue(30)：1-7,7.
碳化硅电力电子器件在电力系统的应用展望
Development and Prospect of SiC Power Devices in Power Grid
摘要
Abstract
Silicon Carbide (SiC) is a wide-bandgap semiconductor that has drawn significant research interests in recent years for its superior physical and electrical properties, such as larger bandgap, high breakdown electric field, high electron saturation velocity and high thermal conductivity. The paper introduces the developments of Silicon Carbide power devices in power grid, including the SiC PiN diodes, SiC-MOSFETs, SiC-IGBTs and SiC Thyristors. The perspectives of SiC power electronic devices in power grid are also proposed. The speedy growth of high power and high current SiC devices will have a strong impact on the development of power grid.关键词
碳化硅/电力电子器件/电力系统Key words
Silicon Carbide (SiC)/ power device/ power grid分类
信息技术与安全科学引用本文复制引用
盛况,郭清,张军明,钱照明..碳化硅电力电子器件在电力系统的应用展望[J].中国电机工程学报,2012,32(30):1-7,7.基金项目
国家863高技术基金项目(2011AA050401). （2011AA050401）
